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講　師：Byong-Guk Park　教授
所　属：Materials Science and Engineering, KAIST, Korea
題　目：Materials engineering for field-free spin-orbit torque switching
日　時：2025 年 12月 23 日（火）15:00～16:30
場　所：理学部4号館1220号室

Abstract:
Spin-orbit torque (SOT), generated by spin currents arising from spin-orbit coupling, has attracted significant attention owing to its potential for efficient magnetization switching in spintronic devices, particularly magnetic random-access memory (MRAM). However, in homogeneous structures, SOT-induced switching is not purely electrical - an external in-plane magnetic field is required to achieve deterministic switching, which limits its practicability for device integration. Therefore, realizing field-free SOT switching of perpendicular magnetization, while simultaneously reducing the switching current density, is essential for the advancement of SOT-based technologies. In this talk, I will present various material engineering strategies for achieving field-free SOT switching with reduced switching current through the generation of out-of-plane spin currents and the associated torques. These include magnetic and antiferromagnetic trilayers as well as side-gated structures. Furthermore, I will introduce novel SOT-based spintronic applications, such as spin logic devices, physically unclonable functions (PUFs), and probabilistic bits.